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Hynix PC4-2133 DDR4 4 GB (Dual Channel) Laptop (4GB RAM 1Rx8 PC4-17000 DDR4-2133 1.2 Volts 260 Pin

Rs. 1,349.00 Rs. 2,999.00
Unit price  per 

Hynix PC4-2133 DDR4 4 GB (Dual Channel) Laptop (4GB RAM 1Rx8 PC4-17000 DDR4-2133 1.2 Volts 260 Pin

  • Total Capacity: 4GB Ddr4 single kit | Memory Type: SODIMM
  • 260 Pin | Bus Type: PC4-21300 | Error Correction: Non-ECC
  • Speed: 2666 MT/S | Voltage: 1.2V | Cycle Time: 0.75ns
  • Type-Ddr4 4gb Ram(Pc4)
  • Compatible Device-Laptop
  • Number of Channels: Single Channel
  • Pin Count-260 Pin
  • Ram Voltage-1.2 volt
  • Reduce Power consumption by up to 40 percent and extend battery life
  • Optimized for next-generation processors
  • Two Year Warranty
  • Warranty Not Covered In- Physical & Burnt or tampered
  • Free Delivery
  • 10 Days Return
  • Cash On Delivery Available

highlight's

  • SK Hynix Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Unbuffered DDR4 SDRAM Unbuffered Small Outline DIMMs are intended for use as main memory when installed in systems such as microservers and mobile personal computers.
  • Specifications:Ā This SK Hynix 4Gb DDR4 PC4 2666MHz Laptop Memory RamĀ Reduce power consumption by up to 40% and extend battery life.
  • Features:Ā From the industry leader in PC Memory. As described it's a 4GB DDR4 (PC4) Ram with form factor- SO-DIMM and a voltage rating of 1.2V. It is a low voltage ram (DDR4/PC4/1.2V)

Description

SK Hynix 4Gb DDR4 PC4 2666MHz Laptop Memory RamĀ continues to lead the industry in DRAM timing and density with these 4GB Ddr4Ā PC-21300Ā Premier Series DDR4 2666Mhz single piece memory modules. They are designed and engineered to support the ever more rigorous requirements of enthusiasts and professionals. The high 4GB density overcomes situations where there are only a few DRAM slots on the motherboard, allowing users to maximize system potential and performance. Faster burst access speeds for improved sequential data throughput.

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